Número de pieza SS3695

Semiconductor Device Set

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El precio histórico de este producto está entre 30 and 40.5 USD. Dependiendo de la cantidad, disponibilidad, condición, plazo de entrega y posible interrupción de un artículo, no podemos garantizar el precio hasta que le proporcionemos un presupuesto actualizado.

Número de pieza
Desmilitarización
Vigencia
UOM
NIIN
Número de pieza:
ss3695
Desmilitarización:
No
Vigencia:
N/A
Unidad de medida:
1 EA
NIIN:
001371000
NSN
Número de acciones nacionales:
5961-00-137-1000 5961001371000
TXT
Descripción:
Semiconductor Device Set
INC
INC
Código de nombre del artículo:
20590
MRC:
The element,compound,or mixture of which the inclosure is fabricated,excluding any surface treatment.ABBH
Inclosure Material:
Plastic all transistor
MRC:
The dimension measured along the longitudinal axis with terminated points at the extreme ends of the item.ABHP
Overall Length:
0.170 inches all transistor and 0.210 inches all transistor
MRC:
The dimension measured along the longitudinal axis with terminated points at the extreme ends of the item.ABHP
Overall Length:
0.170 inches and 0.210 inches all transistor
MRC:
A measurement of the longest dimension of a terminal,in distinction from width.ABJT
Terminal Length:
0.500 inches all transistor
MRC:
The distance measured in a straight line from the bottom to the top of an item.ABKW
Overall Height:
0.125 inches all transistor and 0.165 inches all transistor
MRC:
The distance measured in a straight line from the bottom to the top of an item.ABKW
Overall Height:
0.125 inches and 0.165 inches all transistor
MRC:
An overall measurement taken at right angles to the length of an item,in distinction from thickness.ABMK
Overall Width:
0.175 inches all transistor and 0.205 inches all transistor
MRC:
An overall measurement taken at right angles to the length of an item,in distinction from thickness.ABMK
Overall Width:
0.175 inches and 0.205 inches all transistor
MRC:
An indication of the internal basic form of the item.ALAS
Internal Configuration:
Field effect all transistor
MRC:
Indicates the polarity of the channel /conductor material/ used and control type.ALAT
Channel Polarity And Control Type (non-core):
N-channel insulated gate type all transistor
MRC:
The alpha-numeric symbol assigned by the electronic industries association,to registered physical configurations of the cases for electronic items.ALAZ
Joint Electronic Device Engineering Council/jedec/case Outline Designation:
TO-92 all transistor
MRC:
An indication of the functional relationship of the components.ASDD
Component Function Relationship:
Matched
MRC:
The name and number of components included.ASKA
Component Name And Quantity:
2 transistor
MRC:
The means of attaching the item.AXGY
Mounting Method:
Terminal all transistor
MRC:
The chemical compound or mechanical mixture properties of which the semiconductor is fabricated.CTMZ
Semiconductor Material:
Silicon all transistor
MRC:
The value of the voltage that may be applied,expressed in volts,and the symbol used to identify the specific electrical characteristic.CTQN
Voltage Rating In Volts Per Characteristic:
15.0 drain to source voltage all transistor
MRC:
The level of electrical flow and the symbol used to identify the specific electrical characteristic.CTQX
Current Rating Per Characteristic:
2.00 milliamperes operating voltage megawatts all transistor and 20.00 milliamperes zero-gate-voltage source current megawatts all transistor
MRC:
The level of electrical flow and the symbol used to identify the specific electrical characteristic.CTQX
Current Rating Per Characteristic:
2.00 milliamperes zero-gate-voltage drain current and 20.00 milliamperes zero-gate-voltage source current megawatts all transistor
MRC:
The amount of electrical power that can be dissipated and the specific electrical characteristic.CTRD
Power Rating Per Characteristic:
300.0 milliwatts small-signal input power common-collector absolute all transistor
MRC:
Indicates the type and number of terminals for providing electrical connection.TTQY
Terminal Type And Quantity:
2 uninsulated wire lead all transistor

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